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| 2SK2202 Silicon N Channel MOS FET Application TO-220FM High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter 2 12 1 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 120 20 7 14 7 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2202 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 120 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V * ID = 4 A VGS = 4 V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.3 10 250 2.0 0.4 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------ -- 0.35 0.55 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 3.0 5.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 420 140 35 9 50 140 65 1.35 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 320 -- ns -------------------------------------------------------------------------------------- 2SK2202 Power vs. Temperature Derating 40 Pch (W) I D (A) 20 10 5 2 1 0.5 0.2 0.1 0 50 100 150 Tc (C) 200 2 Case Temperature Maximum Safe Operation Area 10 s 10 0 s m s 30 DC PW 1 = 10 m s O pe Channel Dissipation Drain Current ra 20 (T Operation in c = this area is 25 limited by R DS(on) tio n (1 sh ot ) C) 10 Ta = 25 C 5 10 20 50 100 200 Drain to Source Voltage V DS (V) Typical Output Characteristics 10 10 V I D (A) 8 6V 4V 3.5 V 6 3V (A) 8 Pulse Test 10 Typical Transfer Characteristics V DS = 10 V Pulse Test ID Drain Current Drain Current 6 4 4 Tc = -25 C 25 C 75 C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2 VGS = 2.5 V 2 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 2SK2202 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test I D= 5 A Drain to Source On State Resistance R DS(on) ( ) 2.0 5 Static Drain to Source State Resistance vs. Drain Current 1.6 2 1 0.5 Pulse Test 1.2 0.8 2A 0.4 1A V GS = 4 V 10 V 0.2 0.1 0.1 0.2 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20 0.5 1 2 5 10 Drain Current I D (A) 20 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test ID=5A 2A 1A V GS = 4 V 5A 1, 2 A Forward Transfer Admittance vs. Drain Current 10 5 V DS = 10 V Pulse Test Tc = 75 C 25 C -25 C 0.8 2 1 0.5 0.6 0.4 0.2 0 -40 10 V 0.2 0.1 0.1 0 40 80 120 160 Case Temperature Tc (C) 0.2 0.5 1 2 5 10 Drain Current I D (A) 2SK2202 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Capacitance C (pF) 500 Typical Capacitance vs. Drain to Source Voltage 2000 1000 500 200 100 50 20 10 0 10 20 Crss Coss VGS = 0 f = 1 MHz Ciss 200 100 50 20 10 0.1 di / dt = 50 A / s, V GS = 0 Ta = 25 C, Pulse Test 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) VGS 160 I D= 7 A 120 VDS 12 V DD = 100 V 50 V 25 V V DD = 100 V 50 V 25 V 8 16 24 32 Gate Charge Qg (nc) 16 V GS (V) 200 20 500 200 Switching Time t (ns) 100 50 20 10 5 3 0.1 Switching Characteristics t d(off) tf V GS = 10 V V DD = 30 V PW = 2 s duty < 1 % tr Drain to Source Voltage 80 8 40 4 0 40 Gate to Source Voltage t d(on) 0 0.2 0.5 1 Drain Current 2 5 I D (A) 10 2SK2202 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 8 6 4 10 V 2 5V V GS = 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 1 0.0 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C PDM 0.03 D= PW T PW T 0.01 10 1s t ho pu lse 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK2202 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr |
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